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| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. A1 A KRC857E~KRC859E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. C 1 6 C 2 5 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRC857E KRC858E KRC859E 10 22 47 47 47 22 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) J R1(k ) R2(k ) IN COMMON H TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 1 2 D 3 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC857E 859E KRC857E VO RATING 50 30, -6 VI 40, -7 40,-15 IO KRC857E 859E PD * Tj Tstg 100 200 150 -55 150 mA mW V UNIT V CHARACTERISTIC Input Voltage KRC858E KRC859E Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. Marking MARK SPEC TYPE MARK KRC857E NH KRC858E NI KRC859E NJ 6 5 4 Type Name 1 2 3 2002. 1. 24 Revision No : 1 1/4 KRC857E~KRC859E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC857E 859E SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 MIN. 80 GI VO=5V, IO=10mA 80 70 VO(ON) IO=10mA, II=0.5mA VI(ON) VO=0.2V, IO=5mA 0.5 VI(OFF) VO=5V, IO=0.1mA 0.6 1.5 fT * VO=10V, IO=5mA II VI=5V tr VO=5V, VIN=5V RL=1k tf TYP. 150 150 140 0.1 1.2 1.8 3.0 0.75 0.88 1.82 200 0.05 0.12 0.26 2.0 2.4 1.5 0.36 0.4 0.41 MAX. 500 0.3 1.8 2.6 5.8 0.88 0.36 0.16 S mA MHz V V V UNIT nA KRC857E DC Current Gain KRC858E KRC859E Output Voltage KRC857E 859E KRC857E Input Voltage (ON) KRC858E KRC859E KRC857E Input Votlage (OFF) KRC858E KRC859E Transition Frequency KRC857E 859E KRC857E Input Current KRC858E KRC859E KRC857E Rise Time KRC858E KRC859E KRC857E Switching Time Storage Time KRC858E KRC859E KRC857E Fall Time KRC858E KRC859E tstg Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/4 KRC857E~KRC859E 50 OUTPUT CURRENT I O (mA) 30 KRC857E VO =0.2V I O - V I(ON) -25 25 3k OUTPUT CURRENT I O (A) KRC857E I O - V I(OFF) 100 1k C Ta=1 00 C 5 3 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT OFF VOLTAGE VI(OFF) (V) VO =5V Ta=10 0 50 30 OUTPUT CURRENT I O (mA) KRC858E VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (A) KRC858E I O - V I(OFF) 1k 0C 5C Ta=2 Ta=1 5 3 00 C Ta= 10 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V 50 30 OUTPUT CURRENT I O (mA) KRC859E VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (A) KRC859E I O - V I(OFF) 1k 5C Ta=2 Ta =1 5 3 Ta=25 C Ta=-25 C 300 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 INPUT OFF VOLTAGE VI(OFF) (V) VO =5V 2002. 1. 24 Revision No : 1 Ta= 00 100 C 500 Ta=25 C 10 C Ta=- 25 C 10 Ta=2 5C Ta=-2 5C 10 3/4 KRC857E~KRC859E 1k DC CURRENT GAIN G I 500 300 KRC857E VO =5V G I - IO 1k Ta=100 C DC CURRENT GAIN G I 500 300 KRC858E VO =5V G I - IO Ta=100 C Ta=25 C Ta=-25 C 100 50 Ta=25 C Ta=-25 C 100 50 30 1 3 10 30 100 OUTPUT CURRENT IO (mA) 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) G I - IO 1k DC CURRENT GAIN G I 500 300 Ta=100 C KRC859E VO =5V 100 50 Ta=25 C Ta=-25 C 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) 2002. 1. 24 Revision No : 1 4/4 |
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